K. V. Marem'yanin, D. I. Kryzhkov, S. V. Morozov, S. M. Sergeev, D. I. Kuritsyn, D. M. Gaponova, V. Ya. Aleshkin, Yu. G. Sadof'ev, “Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range”, Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 11,Pages <nobr>1499

Semiconductor structures, low-dimensional systems, quantum phenomena

Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range

K. V. Marem'yanin^ab, D. I. Kryzhkov^ab, S. V. Morozov^ab, S. M. Sergeev^a, D. I. Kuritsyn^a, D. M. Gaponova^a, V. Ya. Aleshkin^ab, Yu. G. Sadof'ev^c

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The time-resolved photoluminescence of GaAs/AlGaAs quantum-cascade structures under intense pulse excitation is studied. Aside from optical transitions between the ground electron and hole states of a system of two tunnel-coupled quantum wells, the photoluminescence spectrum at short times after the excitation pulse exhibits features corresponding to transitions between the excited states of these wells, which are not observed in time-integrated photoluminescence spectra. It is shown that, due to a high pump level, the electron gas is initially strongly heated, which makes it possible to observe band-to-band transitions between both the ground and excited states. Nonequilibrium carriers cool down with a characteristic relaxation time of $\sim$125 ps.

Received: 14.04.2014
Accepted: 22.04.2014