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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 11, Pages 1535–1539 (Mi phts7751)

This article is cited in 11 papers

Semiconductor physics

Gas-sensitive layers based on fractal-percolation structures

V. A. Moshnikovab, S. S. Nalimovaa, B. I. Seleznevb

a Saint Petersburg Electrotechnical University "LETI"
b Yaroslav-the-Wise Novgorod State University

Abstract: A model of sensitive layers with built-in percolation-cluster structure near the percolation threshold is developed. It is shown that, in the case of the interaction of such gas-sensitive layers with reducing gases, the value of the gas sensitivity can exceed the typical values by several orders of magnitude. The specific features of variation in the impedance response of the percolation structures in the vicinity of the percolation threshold in air and in the case of the influence of a reducing gas are considered.

Received: 12.03.2014
Accepted: 26.03.2014


 English version:
Semiconductors, 2014, 48:11, 1499–1503

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