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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 11, Pages 1543–1548 (Mi phts7753)

Semiconductor physics

Planar microcavity containing luminescent diamond particles with embedded silicon–vacancy color centers in its active layer

S. A. Grudinkinab, N. A. Feoktistovab, A. V. Medvedeva, A. A. Dukina, V. G. Golubevab

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: A planar hybrid microcavity containing isolated diamond particles with embedded silicon–vacancy (Si–V) color centers in its active layer is fabricated by plasma-enhanced chemical vapor deposition. Distributed Bragg reflectors are produced on the basis of alternating quarter-wave $a$-Si$_{1-x}$C$_x$ : H and $a$-SiO$_2$ layers. The color centers are controllably introduced from the gas phase during the course of growth of the diamond particles. A narrowing to 5 nm of the zero-phonon line at a wavelength of 738 nm and suppression of the phonon wing in the photoluminescence spectrum of the Si–V color centers are achieved.

Received: 08.04.2014
Accepted: 28.04.2014


 English version:
Semiconductors, 2014, 48:11, 1507–1511

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