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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 12, Pages 1607–1610 (Mi phts7765)

This article is cited in 7 papers

Surface, interfaces, thin films

Nanostructured Ge$_2$Sb$_2$Te$_5$ chalcogenide films produced by laser electrodispersion

D. A. Yavsin, V. M. Kozhevin, S. A. Gurevich, S. A. Yakovlev, B. T. Melekh, M. A. Yagovkina, A. B. Pevtsov

Ioffe Institute, St. Petersburg

Abstract: Amorphous nanostructured films of a complex chalcogenide (Ge$_2$Sb$_2$Te$_5$) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge$_2$Sb$_2$Te$_5$ nanoparticles in the structure of the films is 1.5–5 nm.

Received: 13.05.2014
Accepted: 20.05.2014


 English version:
Semiconductors, 2014, 48:12, 1567–1570

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