A. E. Zhukov, N. V. Kryzhanovskaya, M. V. Maksimov, A. A. Lipovskii, A. V. Savel'ev, A. A. Bogdanov, I. I. Shostak, È. I. Moiseev, D. V. Karpov, J. Laukkanen, J. Tommila, “Lasing in microdisks of ultrasmall diameter”, Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 12,Pages <nobr>1666

This article is cited in 9 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Lasing in microdisks of ultrasmall diameter

A. E. Zhukov^abc, N. V. Kryzhanovskaya^bc, M. V. Maksimov^ac, A. A. Lipovskii^ac, A. V. Savel'ev^abc, A. A. Bogdanov^ac, I. I. Shostak^a, È. I. Moiseev^a, D. V. Karpov^ad, J. Laukkanen^d, J. Tommila^e

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Saint-Petersburg Scientific Center, Russian Academy of Sciences
^c Peter the Great St. Petersburg Polytechnic University
^d Institute of Photonics, University of Eastern Finland, 80130 Joensuu, Finland
^e Optoelectronics Research Centre, Tampere University of Technology, 33101 Tampere, Finland

Abstract: It is demonstrated by calculations and experimental results that room-temperature lasing can be obtained at the ground-state optical transition of InAs/InGaAs/GaAs quantum dots in optical microcavities with a record-small diameter of 1.5 $\mu$m. In 1-$\mu$m cavities, lasing occurs at the wavelength of one of the whispering-gallery modes within the band corresponding to the first excited-state optical transition.

Received: 05.06.2014
Accepted: 16.06.2014