Picosecond switching of high-voltage reverse-biased $p^+$–$n$–$n^+$ structures to the conductive state by pulsed light

An analytical theory of the picosecond switching of high-voltage reverse biased $p^+$–$n$–$n^+$ structures to the conductive state by pulsed lighting has been developed and a numerical simulation of this process has been performed. Combining the theory and simulation results allowed us to obtain a simple relation between the parameters of structure, light pulse, external circuit and main characteristics of the process, i.e., the activeload current pulse amplitude and switching process duration.