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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 12, Pages 1697–1703 (Mi phts7779)

This article is cited in 4 papers

Semiconductor physics

Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

M. A. Bobrova, S. A. Blokhina, A. G. Kuz'menkovab, N. A. Maleeva, A. A. Blokhinc, Yu. M. Zadiranova, E. V. Nikitinad, V. M. Ustinova

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c Peter the Great St. Petersburg Polytechnic University
d St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)

Abstract: The effect of the photon lifetime in an optical microcavity on the characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with fully doped distributed Bragg reflectors (DBRs) and an oxide current aperture is studied. The photon lifetime in the microcavity is controlled by varying the upper DBR reflectance. It is found that the speed of VCSELs with a current-aperture diameter of 10 $\mu$m is mainly limited by the self-heating effect, despite an increase in the relaxation-oscillation damping coefficient with increasing photon lifetime in the microcavity. At the same time, the higher level of internal optical loss in lasers with a current-aperture diameter of 1.5 $\mu$m leads to dominance of the effect of relaxation-oscillation damping independently of the radiation output loss. In the case of devices with a current-aperture diameter of 5.5 $\mu$m, both mechanisms limiting the speed operate, which allow an increase in the VCSEL effective modulation frequency from 21 to 24 GHz as the photon lifetime decreases from 3.7 to 0.8 ps.

Received: 20.05.2014
Accepted: 30.05.2014


 English version:
Semiconductors, 2014, 48:12, 1657–1663

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