Abstract:
Strontium-titanate films obtained by the sol–gel technique are deposited onto silicon and silicon/oxide titanium/platinum substrates. The strontium-titanate phase is detected by the method of X-ray diffraction analysis after heat treatment at temperatures of 750 and 800$^\circ$C. The thickness of the films obtained by the spin-on method increases from 50 to 250 nm as the number of deposited layers is increased and is accompanied with an increase in the grain size in the films. Prospects of the development of the sol-gel technique for the formation of film components of electronic devices based on SrTiO$_3$ xerogels are discussed.