RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2025 Volume 59, Issue 3, Pages 123–129 (Mi phts7784)

XXIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2025

Energy-efficient and stable resistive switching in vanadium dioxide nanocrystals

K. E. Kapoguzovab, S. V. Mutilina, D. M. Milyushinab, V. B. Kalininaab, B. V. Voloshina, I. V. Korolkovc, V. N. Kichaic, L. V. Yakovkinac, V. A. Selezneva

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk

Abstract: We investigate an electrically-driven semiconductor- metal phase transition in formed polycrystalline films, nanocrystal arrays, and a single nanocrystal of vanadium dioxide. An increase by about an order of magnitude in the current jump during the phase transition was observed in the nanocrystal arrays compared to solid films, which is in agreement with the parallel resistance model. We found that the switching threshold power decreases by 4–5 orders of magnitude when compared a solid film to single nanocrystals and reaches a value of about 40 nW. This effect occurs due to lower heat dissipation in single nanocrystals. Vanadium dioxide nanocrystals have demonstrated high stability when switched at least 10$^{10}$ times. The results obtained are promising for the formation of energy-efficient, stable and durable switching elements based on vanadium dioxide single nanocrystals.

Received: 26.03.2025
Revised: 23.06.2025
Accepted: 23.06.2025

DOI: 10.61011/FTP.2025.03.61089.7734



© Steklov Math. Inst. of RAS, 2025