D. E. Kolesina, F. M. Kochetkov, A. A. Vorobyev, K. N. Novikova, A. S. Goltaev, I. S. Mukhin, “Elastic light-emitting diode based on InGaN/GaN microwires and SWCNT/PDMS matrix electrode”, Fizika i Tekhnika Poluprovodnikov, 2025, Volume 59, Issue 3,Pages <nobr>136

XXIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2025

Elastic light-emitting diode based on InGaN/GaN microwires and SWCNT/PDMS matrix electrode

D. E. Kolesina^a, F. M. Kochetkov^ab, A. A. Vorobyev^a, K. N. Novikova^a, A. S. Goltaev^a, I. S. Mukhin^ab

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Presents the fabrication process of elastic light-emitting diode based on InGaN/GaN mircowires with “core-shell” structure encapsulated into commercial polydimethylsiloxane Sylgard 184. In order to improve electrical and mechanical properties the matrix pixel electrodes – the addressing top and the general bottom – was established. Electro-optical perfomances was measured along to axis, and fabricated ligh-emitting diode demonstrates a blue light emission observed by human eyes and an able to stable work.

Received: 26.03.2025
Revised: 23.06.2025
Accepted: 23.06.2025

DOI: 10.61011/FTP.2025.03.61091.7749