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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 1, Pages 3–8 (Mi phts7794)

This article is cited in 20 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Superstructured ordering in Al$_x$Ga$_{1-x}$As and Ga$_x$In$_{1-x}$P alloys

P. V. Seredina, È. P. Domashevskayaa, I. N. Arsent'evb, D. A. Vinokurovb, A. L. Stankevichb, T. Prutskijc

a Voronezh State University
b Ioffe Institute, St. Petersburg
c Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Privada 17 Norte, No 3417, Col San Miguel Huyeotlipan, 72050, Puebla, Pue., Mexico

Abstract: Epitaxial heterostructures produced on the basis of Al$_x$Ga$_{1-x}$As and Ga$_x$In$_{1-x}$P ternary alloys by metal-organic chemical vapor deposition are studied. The composition parameter x of the alloys was $\sim$ 0.50. By X-ray diffraction studies, scanning electron microscopy, atomic force microscopy, and photoluminescence spectroscopy, it is shown that superstructured ordered phases with the stoichiometry composition III$_{1-\eta}$III$_{1+\eta}$V$_2$ can be formed. As a consequence of this effect, not only does the cubic crystal symmetry change to the tetragonal type in the new compound, but also the optical properties become different from those of disordered alloy with the same composition.

Received: 11.04.2012
Accepted: 25.04.2012


 English version:
Semiconductors, 2013, 47:1, 1–6

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