Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy

The growth of epitaxial Al$_x$Ga$_{1-x}$As:C alloys by metal-organic chemical vapor deposition (MOCVD) at low temperatures results in the formation of quaternary (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys, in which carbon atoms can be concentrated at lattice defects in the epitaxial alloy with the formation of impurity nanoclusters.