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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 1, Pages 24–29 (Mi phts7798)

This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

On the lifetime of charge carriers in quantum dots at low temperatures

D. M. Samosvat, V. P. Evtikhiev, A. S. Shkol'nik, G. G. Zegrya

Ioffe Institute, St. Petersburg

Abstract: The nonequilibrium lifetime of charge carriers in a quantum dot has been experimentally and theoretically investigated. It has been shown that, at low temperatures when the ground state is fully occupied, the lifetime is almost independent of the excitation density and determined only by radiative recombination. Such behavior is theoretically explained and it is shown that, under the condition of the fully occupied ground state, the Auger recombination process can be suppressed by spin effects. The suppression of Auger recombination in such a system is microscopically described.

Received: 16.04.2012
Accepted: 25.04.2012


 English version:
Semiconductors, 2013, 47:1, 22–27

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