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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 2, Pages 174–177 (Mi phts7820)

This article is cited in 1 paper

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Utilization of silicon detectors with “ideal-diode” current-voltage characteristics

V. L. Sukhanov, P. N. Aruev, M. V. Drozdova, N. V. Zabrodskaya, V. V. Zabrodskii, M. S. Lazeeva, V. V. Filimonov, E. V. Sherstnev

Ioffe Institute, St. Petersburg

Abstract: The extremely low level of intrinsic noise attained in silicon detectors with “ideal-diode” current-voltage characteristics has made it possible to create measuring circuits capable of detecting currents as low as 10$^{-16}$ A and, at the same time, featuring a dynamic range as large as 10$^{11}$ – 10$^{12}$.

Received: 17.07.2012
Accepted: 20.07.2012


 English version:
Semiconductors, 2013, 47:2, 209–212

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