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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 2, Pages 273–279 (Mi phts7839)

This article is cited in 11 papers

Semiconductor physics

High-efficiency GaSb photocells

V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, N. Kh. Timoshina, N. S. Potapovich, B. Ya. Ber, D. Yu. Kazantsev, V. M. Andreev

Ioffe Institute, St. Petersburg

Abstract: High-current solar cells based on gallium antimonide and intended for use in solar modules and systems with solar-spectrum splitting at large solar light concentration ratios, in thermophotovoltaic generators with a high-temperature emitter, and in laser energy converters have been designed and fabricated by the diffusion of zinc from the gas phase. The influence exerted by the thickness of the $p^+$ diffusion layer on the basic characteristics of the solar cell has been studied. The optimal doping profile and the $p$$n$-junction depth providing a high photovoltaic conversion efficiency at photocurrent densities of up to 100 A cm$^{-2}$ have been determined.

Received: 16.07.2012
Accepted: 25.07.2012


 English version:
Semiconductors, 2013, 47:2, 307–313

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