Abstract:
High-current solar cells based on gallium antimonide and intended for use in solar modules and systems with solar-spectrum splitting at large solar light concentration ratios, in thermophotovoltaic generators with a high-temperature emitter, and in laser energy converters have been designed and fabricated by the diffusion of zinc from the gas phase. The influence exerted by the thickness of the $p^+$ diffusion layer on the basic characteristics of the solar cell has been studied. The optimal doping profile and the $p$–$n$-junction depth providing a high photovoltaic conversion efficiency at photocurrent densities of up to 100 A cm$^{-2}$ have been determined.