RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 3, Pages 364–368 (Mi phts7855)

This article is cited in 2 papers

Semiconductor physics

Features of the performance of a transient voltage suppressor in the pulsed mode

A. Z. Rahmatova, O. A. Abdulkhaevb, A. V. Karimovb, D. M. Yodgorovab

a OAS "Foton", Tashkent
b Physical-Technical Institute, Uzbekistan Academy of Sciences

Abstract: It is experimentally shown that the pulse withstand capacity of transient voltage suppressors, independent of power rating, decreases by the same law with increasing pulse duration, which indicates their optimum design parameters. The interrelation between transition times (turned on and off) and the characteristic parameters of the transient voltage suppressor structure is shown. The possibility of emitting a power fraction at the resonance frequency is an additional stimulus to increasing the withstand power.

Received: 30.01.2012
Accepted: 23.03.2012


 English version:
Semiconductors, 2013, 47:3, 387–391

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025