The mechanism of contact-resistance formation on lapped $n$-Si surfaces

Anomalous temperature dependences of the specific contact resistance $\rho_c(T)$ of Pd$_2$S–Ti–Au ohmic contacts to lapped $n$-Si with dopant concentrations of 5 $\times$ 10$^{16}$, 3 $\times$ 10$^{17}$, and 8 $\times$ 10$^{17}$ cm$^{-3}$ have been obtained. The anomalous dependences of $\rho_c(T)$ have been accounted for under the assumption that the current flows along nanodimensional metallic shunts, which are combined with dislocations with a diffusionrelated limit in the supply of charge carriers taken into account. The densities of conducting and scattering dislocations in the surface region of the semiconductor are determined.