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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 4, Pages 466–472 (Mi phts7872)

Semiconductor structures, low-dimensional systems, quantum phenomena

Resonance Coulomb scattering at shallow donors in AlGaAs/$n$-GaAs/AlGaAs quantum wells

V. Ya. Aleshkin, D. I. Burdeiny

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The characteristics of the Coulomb scattering of conduction electrons at shallow donor centers in Al$_x$Ga$_{1-x}$As/$n$-GaAs/Al$_x$Ga$_{1-x}$As quantum well heterostructures are studied theoretically with consideration for the influence of resonance states. The resonance states emerge below the excited quantum-confinement subbands because of the presence of donors. It is found that the spectra of total and transport Coulomb-scattering cross sections exhibit asymmetric resonance features in the vicinity of resonance energies. It is shown that these features do not exhibit a small effect: in the vicinity of resonance energies, the cross sections can differ from the corresponding quantities in the nonresonance case several times.

Received: 28.04.2012
Accepted: 30.05.2012


 English version:
Semiconductors, 2013, 47:4, 487–493

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