RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 4, Pages 493–502 (Mi phts7876)

This article is cited in 8 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Theory of space-charge-limited ballistic currents in nanostructures of different dimensionalities

M. V. Beznogovab, R. A. Surisab

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)

Abstract: A new unified approach to the description of ballistic unipolar-injection currents is proposed for nanostructures of different dimensionalities. It is shown that in the case of three-dimensional (3D), two-dimensional (2D), and one-dimensional (1D) structures the problem can be reduced to a nonlinear integral equation with a dimensionless parameter determining the coefficient of the universal current-voltage characteristic. The existence of a maximum for this parameter, which is analogous to the Bursian limit for a vacuum diode, is proven for each dimensionality. The current-voltage characteristics and the potential and charge distributions are calculated for 3D, 2D, and 1D structures.

Received: 11.10.2012
Accepted: 15.10.2012


 English version:
Semiconductors, 2013, 47:4, 514–524

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025