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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 5, Pages 608–612 (Mi phts7895)

This article is cited in 12 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Resonant inelastic light scattering and photoluminescence in isolated nc-Si/SiO$_2$ quantum dots

F. D. Bairamovab, V. V. Toporova, E. D. Poloskina, B. H. Bairamova, C. Röderc, C. Sprungc, K. Bohmhammelc, J. Seidelc, G. Irmerc, A. Lashkuld, E. Lähderantad, Y. W. Songe

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Institutre of Theoretical Physics, University of Mining and Technology, Freiberg, Germany
d Lappeenranta University of Technology, Lappeenranta, Finland
e Korea Polytechnic University, 2121, Jyndwang-dong, Siheungcity, Gyeonggi-do, 429-793, Korea

Abstract: Observation at the room temperature the spectra of the resonant inelastic light scattering by the spatially confined optical phonons as well as the excitonic luminescence caused by confinement effects in the ensemble of isolated quantum dots (QDs) nc-Si/SiO$_2$ is reported. It is shown that the samples investigated are high purity and high crystalline perfection quality nc-Si/SiO$_2$ QDs without amorphous phase $\alpha$-Si and contaminants. Comparison between the experimental data obtained and phenomenological model of the strong space confinement of optical phonons revealed the need of the more accurate form of the weighted function for the confinement of optical phonons. It is shown that simultaneous detection of the inelastic light scattering by the confinement of phonons and the excitonic luminescence spectra by the confined electron-hole pairs in the nc-Si/SiO$_2$ QDs allows selfconsistently to determine more accurate values of the diameter of the nc-Si/SiO$_2$ QDs.

Received: 17.07.2012
Accepted: 17.07.2012


 English version:
Semiconductors, 2013, 47:5, 623–627

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