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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 5, Pages 637–641 (Mi phts7900)

This article is cited in 15 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Conductivity of nanocrystalline ZnO(Ga)

N. A. Vorob'evaa, M. N. Rumyantsevaa, P. A. Forshb, A. M. Gaskova

a Lomonosov Moscow State University, Faculty of Chemistry
b Lomonosov Moscow State University, Faculty of Physics

Abstract: Nanocrystalline zinc-oxide powders containing different proportions of gallium, ZnO(Ga), are synthesized by coprecipitation from aqueous solutions followed by annealing at 250$^\circ$C. The dependence of the conductance of the samples on the Ga content is found to be non-monotonous. The temperature dependences of the conductance are studied. The introduction of a low Ga content (0.33–0.50 at%) induces a decrease in the activation energy and the height of the effective potential barrier between nanocrystallites compared to the corresponding parameters of ZnO. Then, as the Ga content is increased, these parameters increase. The data obtained in the study are interpreted within the context of the model of an inhomogeneous semiconductor with large-scale potential fluctuations.

Received: 23.07.2012
Accepted: 13.08.2012


 English version:
Semiconductors, 2013, 47:5, 650–654

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