A. M. Nadtochiy, W. Hofmann, T. D. Germann, S. A. Blokhin, L. Ya. Karachinsky, M. V. Maksimov, V. A. Shchukin, A. E. Zhukov, D. Bimberg, “High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5,Pages <nobr>684

Semiconductor physics

High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

A. M. Nadtochiy^ab, W. Hofmann^c, T. D. Germann^c, S. A. Blokhin^abd, L. Ya. Karachinsky^abd, M. V. Maksimov^ab, V. A. Shchukin^ae, A. E. Zhukov^b, D. Bimberg^c

^a Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Institut fur Festkorperphysik, Technische Universitat Berlin, 10623 Berlin, German
^d Connector Optics LLC, St. Petersburg
^e VI Systems GmbH, 10623 Berlin, Germany

Abstract: The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electroreflectance. The experimental data obtained are approximated using the suggested equivalent electrical circuit, which accounts for the formation of a nonequilibrium space charge in the carrier-depletion region of the modulator. The bandwidth of the high-frequency electrical-signal transfer to the electro-optical region, determined for the suggested equivalent electrical circuit of the modulator, is shown to be 3GHz.