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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 6, Pages 821–824 (Mi phts7934)

This article is cited in 1 paper

Semiconductor physics

Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 $\mu$m)

A. N. Imenkova, V. V. Sherstneva, I. V. Kovaleva, N. D. Il'inskayaa, O. Yu. Serebrennikovaa, R. Teissierb, A. N. Baranovb, Yu. P. Yakovleva

a Ioffe Institute, St. Petersburg
b Institut d'Electronique du Sud (IES), Université Montpellier 2, CNRS, IES (UMR CNRS 5214), 34095 Montpellier, France

Abstract: The temperature dependence of the threshold current and emission spectra of disk-shaped quantum-well whispering-gallery mode (WGM) lasers is studied in the temperature range of 80–463 K in which the laser emission wavelength increases from 2 to 2.5 $\mu$m. It is shown that lasing is observed up to 190$^\circ$C. Radiative recombination is dominant up to a temperature of 300 K, and nonradiative Auger recombination, in which a recombining electron gives energy to another electron, is so at higher temperatures. The spin-orbit split-off valence subband is not involved in recombination processes, which is attributed to mechanical compression of the quantum-well material.

Received: 17.09.2012
Accepted: 23.09.2012


 English version:
Semiconductors, 2013, 47:6, 831–834

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