RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 7, Pages 865–868 (Mi phts7942)

This article is cited in 3 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Formation of structures with noncatalytic CdTe nanowires

I. P. Sotnikovabc, V. A. Petrova, Yu. Yu. Proskuryakovd, D. A. Kudriashovab, A. V. Nashchekinb, G. È. Cirlinabc, R. Treharned, K. Durosed

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d University of Liverpool, L69 3BX Liverpool, United Kingdom

Abstract: The processes of the noncatalytic synthesis of structures with CdTe nanowires by magnetron sputtering deposition are studied. It is shown that the deposition of magnetron sputtered CdTe onto substrates covered by a porous SiO$_2$ layer can result in CdTe nanowires formation. The porosity of SiO$_2$ layers with thicknesses from 2 to 15 nm fabricated by magnetron sputtering deposition is estimated.

Received: 20.11.2012
Accepted: 30.11.2012


 English version:
Semiconductors, 2013, 47:7, 875–878

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025