Experimental and analytical study of the mechanical stress compensation problem in the InGaAs multiple quantum wells for near-infrared light emitting diodes

The applicability of various methods for calculating the optimal thickness of compensating layers for InGaAs multiple quantum wells used in the active area of (Al)GaAs near-infrared light emitting diodes grown on vicinal substrates with different angle of misorientation is considered. High accuracy of the considered methods for structures, grown on substrates with small misorientation angle (up to 2$^\circ$) is experimentally demonstrated. For structures on strongly misoriented substrates (6$^\circ$+), the applicability of the methods is limited to finding the thickness of compensating layers in the first approximation. Light emitting diodes with high efficiency (62%), quantum efficiency (57%) and high optical power at a current of up to 1 A are created.