Study of lifetimes of nonequilibrium charge carriers by electroluminescence method in multijunction solar cells under irradiation with high-energy protons and electrons

Triple-junction GaInP/Ga(In)As/Ge solar cells were studied by the electroluminescence method after irradiation with 2 and 4.5 MeV electrons and 10 MeV protons. The recombination current densities of $p$–$n$ junctions were determined and the dependences of the lifetimes of nonequilibrium charge carriers in GaInP and Ga(In)As layers were calculated depending on the fluences of damaging particles and the dose of structural damage, the damage coefficients for the considered materials and particles were calculated.