V. N. Katerinchuk, Z. R. Kudrynskyi, V. V. Khomyak, I. G. Orletskii, V. V. Netyaga, “Electrical and photoelectric properties of $n$-CdO–$p$-InSe anisotype heterojunctions”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 7,Pages 935

This article is cited in 7 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical and photoelectric properties of $n$-CdO–$p$-InSe anisotype heterojunctions

V. N. Katerinchuk^a, Z. R. Kudrynskyi^a, V. V. Khomyak^b, I. G. Orletskii^b, V. V. Netyaga^a

^a Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev
^b Chernivtsi National University named after Yuriy Fedkovych

Abstract: Anisotype $n$-CdO–$p$-InSe heterojunctions are for the first time fabricated on the basis of layered InSe crystals. The temperature dependences of the current-voltage characteristics of the heterojunctions are studied and the mechanisms of charge transport across the barrier under forward and reverse biases are determined. The spectral range of photosensitivity of the heterojunctions is determined.

Received: 11.10.2012
Accepted: 20.10.2012