Ultralow-frequency photoelectric response of amorphous As$_2$Se$_3$ layers

The results of studying the photodielectric effect in amorphous layers of As$_2$Se$_3$ are reported. Agreement between the experimental and theoretical functions of the relative variation in the conductivity in the infralow-frequency region is observed. The dispersion of the recombination coefficient exhibits a minimum. Possible causes of the observed dependences are discussed.