Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations

Two new designs for a metamorphic buffer, which are modifications of the In$_x$Al$_{1-x}$As metamorphic buffer due to groups of layers with differing lattice parameters, are proposed and implemented. This makes it possible to affect the relaxation of the metamorphic buffer. The structural and electrical characteristics of the obtained metamorphic HEMT nanoheterostructures are also studied.