Effect of surface passivation by SiN/SiO$_2$ of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO$_2$ passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO$_2$ film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device.