A. D. Bouravlev, V. N. Nevedomskiy, E. V. Ubyivovk, V. F. Sapega, A. I. Khrebtov, Yu. B. Samsonenko, G. È. Cirlin, V. M. Ustinov, “(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 8,Pages <nobr>1033

This article is cited in 6 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

A. D. Bouravlev^abc, V. N. Nevedomskiy^a, E. V. Ubyivovk^d, V. F. Sapega^a, A. I. Khrebtov^b, Yu. B. Samsonenko^abc, G. È. Cirlin^abcd, V. M. Ustinov^a

^a Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^d Saint Petersburg State University

Abstract: Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.

Received: 20.12.2012
Accepted: 25.12.2012