Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction

Magnetotunneling between two-dimensional GaAs/InAs electron systems in vertical resonant tunneling GaAs/InAs/AlAs heterostructures is studied. A new-type of singularity in the tunneling density of states, specifically a dip at the Fermi level, is found; this feature is drastically different from that observed previously for the case of tunneling between two-dimensional GaAs tunnel systems in terms of both the kind of functional dependence and the energy and temperature parameters. As before, this effect manifests itself in the suppression of resonant tunneling in a narrow range near zero bias voltage in a high magnetic field parallel to the current direction. Magnetic-field and temperature dependences of the effect’s parameters are obtained; these dependences are compared with available theoretical and experimental data. The observed effect can be caused by a high degree of disorder in two-dimensional correlated electron systems as a result of the introduction of structurally imperfect strained InAs layers.