RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 10, Pages 1310–1312 (Mi phts8029)

This article is cited in 1 paper

Electronic properties of semiconductors

Obtaining of SmS based semiconducting material and investigation of its electrical properties

V. V. Kaminskiia, Shinji Hiraib, Toshihiro Kuzuyab, S. M. Solovieva, N. N. Stepanova, N. V. Sharenkovaa

a Ioffe Institute, St. Petersburg
b Muroran Institute of Technology, 050-8585 Muroran, Hokkaido, Japan

Abstract: Semiconductor samarium monosulfide polycrystals obtained by reaction between samarium trihydride (SmH$_3$) and its sesquisulfide were studied. The temperature, baric and frequency dependences of the resistivity and structural features of the samples were investigated. It is shown that the value of X-ray coherent scattering region is extremely small for SmS samples, 320 $\mathring{\mathrm{A}}$; critical pressure of semiconductor-metal phase transition is higher than in the samples, obtained by other methods, 0.88 GPa; the temperature dependence of the resistivity has metallic behaviour. Hopping mechanism of electron transport was found. All these features are explained by more defective structure of the polycrystalline SmS samples.

Received: 19.02.2013
Accepted: 25.02.2013

Language: English


 English version:
Semiconductors, 2013, 47:10, 1298–1300

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025