S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, K. N. Pankov, A. V. Ershov, D. A. Grachev, A. I. Mashin, È. P. Domashevskaya, “Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 10,Pages 1327

This article is cited in 6 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures

S. Yu. Turishchev^a, V. A. Terekhov^a, D. A. Koyuda^a, K. N. Pankov^a, A. V. Ershov^b, D. A. Grachev^b, A. I. Mashin^b, È. P. Domashevskaya^a

^a Voronezh State University
^b Lobachevsky State University of Nizhny Novgorod

Abstract: Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed.

Received: 12.02.2013
Accepted: 25.02.2013