N. V. Kryzhanovskaya, A. E. Zhukov, A. M. Nadtochiy, M. V. Maksimov, È. I. Moiseev, M. M. Kulagina, A. V. Savel'ev, E. M. Arakcheeva, A. A. Lipovskii, F. I. Zubov, A. Kapsalis, C. Mesaritakis, D. Syvridis, A. Mintairov, D. Livshits, “Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 10,Pages <nobr>1396

This article is cited in 9 papers

Semiconductor physics

Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region

N. V. Kryzhanovskaya^abc, A. E. Zhukov^abc, A. M. Nadtochiy^abc, M. V. Maksimov^ac, È. I. Moiseev^ab, M. M. Kulagina^c, A. V. Savel'ev^ab, E. M. Arakcheeva^ac, A. A. Lipovskii^ab, F. I. Zubov^ab, A. Kapsalis^d, C. Mesaritakis^d, D. Syvridis^d, A. Mintairov^e, D. Livshits^f

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg
^d University of Athens, Athens, Greece 15784
^e University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, IN 46556, USA
^f Innolume GmbH, 44263 Dortmund, Deutschland

Abstract: Microring cavities (diameter $D$ = 2.7–7 $\mu$m) with an active region based on InAs/InGaAs quantum dots are fabricated and their characteristics are studied by the microphotoluminescence method and near-field optical microscopy. A value of 22 000 is obtained for the Q factor of a microring cavity with the diameter $D$ = 6 $\mu$m. Lasing up to room temperature is obtained in an optically pumped ring microlaser with a diameter of $D$ = 2.7 $\mu$m.

Received: 14.02.2013
Accepted: 25.02.2013