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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 11, Pages 1489–1492 (Mi phts8065)

This article is cited in 2 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices

M. S. Kagana, I. V. Altukhova, A. N. Baranovb, N. D. Il'inskayac, S. K. Paprotskiia, R. Teissierb, A. A. Usikovac

a Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Moscow
b Institut d'Electronique du Sud, Université Montpellier 2, 34095 Montpellier Cedex 5, France
c Ioffe Institute, St. Petersburg

Abstract: Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect).

Received: 22.04.2013
Accepted: 30.04.2013


 English version:
Semiconductors, 2013, 47:11, 1478–1480

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