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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 11, Pages 1521–1525 (Mi phts8072)

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Effect of spin-orbit coupling on the structure of the electron ground state in silicon nanocrystals

A. A. Konakovab, N. V. Kurovaa, V. A. Burdova

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The effect of spin-orbit interaction on the structure of the ground state in the conduction band of spherical silicon nanocrystals is theoretically studied using the envelope-function approximation and the $\mathbf{k}\cdot\mathbf{p}$ method. It is shown that the arising weak spin-orbit coupling of the conduction- and valence bands leads to specific asymmetric hybridization of the $s$- and $p$-type envelope functions with opposite spin orientations caused by the anisotropy of spin mixing in the silicon conduction band. As a result, the wave functions of the ground-state transform which is accompanied by an insignificant decrease in its energy. In this case, the spin-mixing parameter in nanocrystals depends strongly on their size due to the quantum-confinement effect.

Received: 22.04.2013
Accepted: 30.04.2013


 English version:
Semiconductors, 2013, 47:11, 1508–1512

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