V. A. Shchukin, N. N. Ledentsov, L. Ya. Karachinsky, S. A. Blokhin, I. I. Novikov, N. A. Bogoslovskii, A. V. Savel'ev, “Efficient electro-optic semiconductor medium based on type-II heterostructures”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 11,Pages <nobr>1542

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Semiconductor structures, low-dimensional systems, quantum phenomena

Efficient electro-optic semiconductor medium based on type-II heterostructures

V. A. Shchukin^ab, N. N. Ledentsov^ab, L. Ya. Karachinsky^bcd, S. A. Blokhin^bd, I. I. Novikov^bcd, N. A. Bogoslovskii^b, A. V. Savel'ev^c

^a VI Systems GmbH, D-10623 Berlin, Germany
^b Ioffe Institute, St. Petersburg
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^d Connector Optics LLC, St. Petersburg

Abstract: An electro-optic medium based on the type-II semiconductor superlattice is proposed. Electrooptic modulation of the intensity of optical reflectance of the electro-optic medium integrated into a vertical Fabry–Perot cavity is studied by the optical-reflectance-spectroscopy method. The experimental data are approximated using an oscillator model of exciton absorption. The efficiency of the electro-optic medium in the case of detuning from the absorption peak by 50 meV in electric fields of 0–50 kV/cm is 10$^{-9}$ m/V at a medium filling factor of 100%.

Received: 03.04.2013
Accepted: 08.04.2013