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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 12, Pages 1586–1590 (Mi phts8082)

This article is cited in 3 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Two-dimensional semimetal in wide HgTe quantum wells: Charge-carrier energy spectrum and magnetotransport

A. V. Germanenkoa, G. M. Minkovb, O. E. Ruta, A. A. Sherstobitovb, S. A. Dvoretskiic, N. N. Mikhailovc

a Institute of Natural Sciences, Ural Federal University named after the first President of Russia Boris Yeltsin, Ekaterinburg
b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Ekaterinburg
c Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The magnetoresistivity and the Hall and Shubnikov-de Haas effects in heterostructures with a single 20.2-nm-wide quantum well made from the gapless semiconductor HgTe are studied experimentally. The measurements are performed on gated samples over a wide range of electron and hole densities. The data obtained are used to reconstruct the energy spectrum of electrons and holes in the vicinity of the extrema of the quantum-confinement subbands. It is shown that the charge-carrier dispersion relation in the investigated systems differs from that calculated within the framework of the conventional $kp$ model.

Received: 22.04.2013
Accepted: 30.04.2013


 English version:
Semiconductors, 2013, 47:12, 1562–1566

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