V. Yu. Panevin, A. N. Sofronov, L. E. Vorob'ev, D. A. Firsov, V. A. Shalygin, M. Ya. Vinnichenko, R. M. Balagula, A. A. Tonkikh, P. Werner, B. Fuhrmann, G. Schmidt, “Lateral photoconductivity in structures with Ge/Si quantum dots”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 12,Pages <nobr>1599

This article is cited in 13 papers

Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 2013

Lateral photoconductivity in structures with Ge/Si quantum dots

V. Yu. Panevin^a, A. N. Sofronov^a, L. E. Vorob'ev^a, D. A. Firsov^a, V. A. Shalygin^a, M. Ya. Vinnichenko^a, R. M. Balagula^a, A. A. Tonkikh^bc, P. Werner^b, B. Fuhrmann^d, G. Schmidt^e

^a Peter the Great St. Petersburg Polytechnic University
^b Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle(Saale), Germany
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^d Martin-Luther-Universität Halle-Wittenberg, Interdisziplinäres Zentrum für Materialwissenschaften (IZM), Heinrich-Damerow-Str. 4 D-06120 Halle(Saale)
^e Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Von-Danckelmann-Platz 3, D-06120 Halle(Saale)

Abstract: The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.

Received: 22.04.2013
Accepted: 30.04.2013