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Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 12, Pages 1681–1686 (Mi phts8100)

This article is cited in 2 papers

Semiconductor physics

Spectral dependence of the linewidth enhancement factor in quantum dot lasers

F. I. Zubova, Yu. M. Shernyakovab, M. V. Maksimovab, A. E. Zhukova, D. A. Livshitsc, A. S. Payusovb, A. M. Nadtochiyb, A. V. Savel'eva, N. V. Kryzhanovskayaa, N. Yu. Gordeevab

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c Innolume GmbH, 44263, Dortmund, Germany

Abstract: The spectral analysis of amplified spontaneous emission is used to determine the linewidth enhancement factor ($\alpha$-factor) in lasers based on InAs/InGaAs quantum dots (QDs) in a wide spectral range near the ground-state optical transition energy. The effect of the pump current and number of QDs on the spectral dependences of the $\alpha$-factor is examined. The temperature dependence of the spectra of the $\alpha$-factor is experimentally determined for the first time for lasers with InAs/InGaAs QDs. An explanation is suggested for the observed anomalous decrease in the $\alpha$-factor with increasing temperature.

Received: 15.05.2013
Accepted: 27.05.2013


 English version:
Semiconductors, 2013, 47:12, 1656–1660

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