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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2025 Volume 59, Issue 5, Pages 251–254 (Mi phts8102)

International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Adsorption of potassium on the surface of Al$_{0.5}$Ga$_{0.5}$N(0001)

M. N. Lapushkin

Ioffe Institute, St. Petersburg

Abstract: The calculation for the adsorption of potassium atoms on the Al$_{0.5}$Ga$_{0.5}$N(0001) surface was performed using the density functional method. The 2D layer of Al$_{0.5}$Ga$_{0.5}$N(0001) was modeled by the Al$_{0.5}$Ga$_{0.5}$N(0001) 2 $\times$ 2 $\times$ 2 supercell containing 10 bilayers of Al$_{0.5}$Ga$_{0.5}$N. On the relaxed Al$_{0.5}$Ga$_{0.5}$N(0001) surface, the Ga atoms are located above the Al atoms. It is shown that the adsorption of K atoms at a coverage of 0.25 monolayers is preferable in the bridge position either between the surface Ga atoms or between the surface N atoms. The adsorption of potassium atoms forms a surface states zone, the electron density of which is localized near the Fermi level.

Received: 05.05.2025
Revised: 04.08.2025
Accepted: 04.08.2025

DOI: 10.61011/FTP.2025.05.61467.7842



© Steklov Math. Inst. of RAS, 2025