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Fizika i Tekhnika Poluprovodnikov, 2025 Volume 59, Issue 5, Pages 310–313 (Mi phts8115)

International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg

Spectral and spatial emission characteristics of edge-emitting InGaAs/GaAs quantum well laser diodes featuring an ultra-broad optical waveguide

A. A. Bekmana, I. A. Melnichenkobc, Yu. M. Shernyakova, G. O. Kornyshova, N. Yu. Gordeeva, A. S. Payusova, O. I. Simchukb, Yu. S. Tkachb, M. V. Maksimovb

a Ioffe Institute, St. Petersburg
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c National Research University "Higher School of Economics", St. Petersburg Branch

Abstract: The laser emission spectra, far-field patterns, and near-field emission intensity distributions of InGaAs/GaAs/AlGaAs edge-emitting quantum well laser diodes with ultra-broad optical waveguide were studied as functions of the pump current and temperature. It was shown that lasing in the ground state occurs in the second-order mode and in the excited state in the fundamental mode.

Received: 28.04.2025
Revised: 16.07.2025
Accepted: 23.07.2025

DOI: 10.61011/FTP.2025.05.61480.8224



© Steklov Math. Inst. of RAS, 2025