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Fizika i Tekhnika Poluprovodnikov, 2012 Volume 46, Issue 1, Pages 70–76 (Mi phts8124)

This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Transport and partial localization of electrons in strained short-period semiconductor superlattices

L. G. Gerchikova, K. Aulenbacherb, Yu. A. Mamaeva, E. Riehnb, Yu. P. Yashina

a St. Petersburg Polytechnic University
b Institute of Nuclear Physics, Mainz University, Mainz, D-55128, Germany

Abstract: The transport of polarized electrons in photocathodes based on highly strained semiconductor superlattices is studied experimentally and theoretically. In the experiments, the electron emission from the photocathode excited by a femtosecond laser pulse is studied by time-resolved measurements. The response time and the spin relaxation time are experimentally determined. The photoresponse of the photocathodes is calculated, and the results are correlated with the experimental data. A conclusion regarding the partial localization of photoelectrons in the superlattice is drawn.

Received: 10.05.2011
Accepted: 21.06.2011


 English version:
Semiconductors, 2012, 46:1, 67–74

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