A. D. Bouravlev, G. È. Cirlin, V. V. Romanov, N. T. Bagraev, E. S. Brilinskaya, N. A. Lebedeva, S. V. Novikov, H. Lipsanen, V. G. Dubrovskii, “Formation of (Ga,Mn)As nanowires and study of their magnetic properties”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2,Pages <nobr>188

This article is cited in 11 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Formation of (Ga,Mn)As nanowires and study of their magnetic properties

A. D. Bouravlev^abc, G. È. Cirlin^abd, V. V. Romanov^e, N. T. Bagraev^ae, E. S. Brilinskaya^e, N. A. Lebedeva^c, S. V. Novikov^c, H. Lipsanen^c, V. G. Dubrovskii^abe

^a Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Aalto University, Aalto, FI-00076, Finland
^d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^e St. Petersburg Polytechnic University

Abstract: The molecular-beam epitaxy technique is used to synthesize arrays of (Ga,Mn)As nanowire crystals on a GaAs (111)B surface in the growth-temperature range 480–680$^\circ$C. It is established that the formation of (Ga,Mn)As nanowires can be described in the context of a vapor-liquid-crystal mechanism. It is shown that the growth of (Ga,Mn)As nanowires must occur in conditions stabilized with respect to Ga. It is found that the field and temperature dependences of the static magnetic susceptibility for samples produced at the temperature 660$^\circ$C exhibit paramagnetic behavior.

Received: 04.07.2011
Accepted: 11.07.2011