A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, I. L. Kalentyeva, “Influence of defect formation as a result of incorporation of a Mn <nobr>$\delta$</nobr> layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2,Pages <nobr>194

This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Influence of defect formation as a result of incorporation of a Mn $\delta$ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells

A. P. Gorshkov, I. A. Karpovich, E. D. Pavlova, I. L. Kalentyeva

National Research Lobachevsky State University of Nizhny Novgorod

Abstract: The influence of defect formation upon the deposition of a Mn $\delta$ layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Received: 06.07.2011
Accepted: 11.07.2011