RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2012 Volume 46, Issue 2, Pages 235–240 (Mi phts8155)

This article is cited in 4 papers

Semiconductor physics

Effect of an excited-state optical transition on the linewidth enhancement factor of quantum dot lasers

A. E. Zhukovabc, A. V. Savel'evac, M. V. Maksimovab, Yu. M. Shernyakovab, E. M. Arakcheevaa, F. I. Zubova, A. A. Krasivicheva, N. V. Kryzhanovskayaab

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c St. Petersburg Polytechnic University

Abstract: An analytical expression is derived for the linewidth enhancement factor of a quantum-dot laser, which makes it possible to describe its dependence on optical loss and photon density in an explicit form. The model accounts for refractive index variations at the ground-state optical transition due to gain/absorption variations upon the first excited-state transition in quantum dots. It is shown that a decrease in optical loss, an increase in saturated gain, and an increase in the energy separation between the excited-state and ground-state transitions results in a decrease in the $\alpha$ factor both at and above the lasing threshold.

Received: 06.07.2011
Accepted: 11.07.2011


 English version:
Semiconductors, 2012, 46:2, 225–230

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025