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Fizika i Tekhnika Poluprovodnikov, 2012 Volume 46, Issue 2, Pages 241–246 (Mi phts8156)

This article is cited in 15 papers

Semiconductor physics

Features of simultaneous ground- and excited-state lasing in quantum dot lasers

A. E. Zhukovabc, M. V. Maksimovab, Yu. M. Shernyakovab, D. A. Livshitsd, A. V. Savel'evac, F. I. Zubova, V. V. Klimenkoa

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c Peter the Great St. Petersburg Polytechnic University
d Innolume GmbH, 44263 Дортмунд, Германия

Abstract: The lasing spectra and light-current (L–I) characteristics of an InAs/InGaAs quantum dot laser emitting in the simultaneous lasing mode at the ground- and excited-state optical transitions are studied. Lasing and spontaneous emission spectra are compared. It is shown that ground-state quenching of lasing is observed even in the absence of active region self-heating or an increase in homogeneous broadening with growth in the current density. It is found that the intensities of both lasing and spontaneous emission at the ground-state transition begin to decrease at a pump intensity that significantly exceeds the two-level lasing threshold. It is also found that different groups of quantum dots are involved in ground- and excited-state lasing.

Received: 06.07.2011
Accepted: 11.07.2011


 English version:
Semiconductors, 2012, 46:2, 231–235

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