S. A. Karandashov, B. A. Matveev, I. V. Mzhelskii, V. G. Polovinkin, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, “Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)”, Fizika i Tekhnika Poluprovodnikov, 2012, Volume 46, Issue 2,Pages 258

This article is cited in 2 papers

Semiconductor physics

Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)

S. A. Karandashov^a, B. A. Matveev^a, I. V. Mzhelskii^b, V. G. Polovinkin^b, M. A. Remennyi^a, A. Yu. Rybalchenko^a, N. M. Stus^a

^a Ioffe Institute, St. Petersburg
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this non-uniformity is one of the main causes of the poor sensitivity of photodiodes which have low dynamic resistance at zero bias and which operate in the photocurrent mode.

Received: 25.07.2011
Accepted: 01.08.2011