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Fizika i Tekhnika Poluprovodnikov, 2012 Volume 46, Issue 3, Pages 376–378 (Mi phts8180)

This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Mapping of two-photon luminescence amplification in zinc-oxide microstructures

S. V. Seminab, N. È. Sherstyuka, E. D. Mishinaa, K. Germanc, L. Kulyukc, Th. Rasingb, L.-H. Pengd

a MIREA — Russian Technological University, Moscow
b Institute for Molecules and Materials, Radboud University Nijmegen, 6525 HP, Nijmegen, The Netherlands
c Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, MD-2028, Republic of Moldova
d Department of Electrical Engineering and Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan (R.O.C.)

Abstract: The mapping of two-photon excited luminescence in aggregations of free-standing zinc oxide microrods has been carried out at room temperature. Two-photon luminescence spectra in the excitonic region for individual microrods have been recorded. The luminescence intensity exhibits a power-law dependence on the optical pump power with the exponent $n >$ 2. This fact, along with the existence of a threshold power above which the dependence in the exciton region deviates from a quadratic one, indicates the onset of light amplification in individual ZnO microrods and the conditions preceding laser oscillation.

Received: 05.09.2011
Accepted: 12.09.2011


 English version:
Semiconductors, 2012, 46:3, 360–362

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